113.1 The MOS as a switch.113.2 Logic Simulation of the MOS.123.3 MOS layout.123.4 Vertical aspect of the MOS.143.5 Static Mos Characteristics.143.6 Dynamic MOS behavior.153.7 Analog Simulation.163.8 Layout considerations. 82.2 Frequency Improvements.92.3 Increased Layers.10ģ The MOS device. 82.1 Evolution of Microprocessors and Memories. Etienne SICARD is the author of severalĮducational software in the field of microelectronics and sound processing.ġ Introduction & Installation.
His research interests include several aspects of design of integrated circuits including crosstalkįault tolerance, and electromagnetic compatibility of integrated circuits. Sicard is currently an associate professor at the INSA Electronic Engineering University of Balearic Islands, Spain, E. Previously a professor of electronics in the department of physics, at the Months at the University of Osaka, Japan. He was granted a Monbusho scholarship and stayed 18
He received a B.S degree in 1984 and a PhD in ElectricalĮngineering in 1987 both from the University of Toulouse. IntroductionĮTIENNE SICARD was born in Paris, France, in June 1961.
